在当前的工业生产中,硅外延的最普遍的方法是SiCι_4+H_2热还原法.由于设备状态、衬底状态和对外延层的要求不同,工艺方法亦不可能完全统一,对薄层外延尤其如此.所谓薄层外延,不只是外延层厚度薄,更重要的是外延层的厚度、电阻率均匀,缺陷少,衬底外延层界面有一个陡峭的杂质浓度分布.自1980 In the current industrial production, the most common method of silicon epitaxy is the SiC1_4 + H_2 thermal reduction method.As the equipment state, the substrate state and the requirements of the epitaxial layer are different, the process method can not be completely unified, So-called thin-layer epitaxy, not only the epitaxial layer thickness is thin, more important is the epitaxial layer thickness, uniform resistivity, fewer defects, the substrate epitaxial layer interface has a steep impurity concentration distribution since 1980