随着电子工业的迅速发展,对半导体硅材料的质量已从纯度、均匀性和完整性等方面提出了新的更高的要求.摸索高均匀性硅单晶的制备途径,已越来越引起人们的重视.近年来我国成功地研制了NTD硅单晶,并在半导体器件的应用中,取得了可喜的进展,它提高了器件的电压特性和产品合格率.本文将阐述NTD硅单晶的原理、特点及其在器件制造中显示的优越性.二、NTD硅制备原理利用原子反应堆对单晶硅进行中子辐照, With the rapid development of the electronics industry, new and higher requirements have been put forward on the quality of semiconductor silicon materials from aspects of purity, uniformity and integrity, etc. The exploration of the preparation route of highly uniform silicon single crystal has been increasingly causing People pay more attention to.In recent years, China has successfully developed NTD silicon single crystal, and in the application of semiconductor devices, made gratifying progress, it improves the device voltage characteristics and product qualification rate.This article will describe NTD silicon single crystal Principle, characteristic and advantage that its display in the device manufacture.Second, NTD silicon preparation principle uses the nuclear reactor to carry on the neutron irradiation to the silicon single crystal,