以单晶碲化镉为基体在等温条件下在密封的结构内利用气相输运方法生长碲镉汞外延膜。用该法制备出来的外延层在汞蒸汽压下退火。用逐层腐蚀掉表面层的方法在77K到450K温度范围内测得了电导率和霍尔系数。借助于适当的工艺得到了n-型或p-型膜,其迁移率达10~5厘米~2/伏·秒。 The growth of HgCdTe films was carried out by gas phase transport in a sealed structure using single crystal cadmium telluride as substrate under isothermal conditions. The epitaxial layer prepared by this method is annealed at mercury vapor pressure. Conductivity and Hall coefficient were measured over the temperature range of 77K to 450K by layer-by-layer etching of the surface layer. An n-type or p-type film is obtained by means of a suitable process and has a mobility of 10-5 cm -2 / V · sec.