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对一系列InSb红外探测器阵列已进行了俄歇和深度-分布分析,目的在于检测界面沾污并阐明其原因是由于阵列工艺过程不当所致。确定在工艺过程中发生的局部界面沾污和错用材料对阵列性能和成品率严重影响的方面有三,即薄片扩散、SiO淀积和InSb表面阳极氧化。在扩散时杂质源镉在局部集结会形成不良的结和成核,这种局部集结有可能使接触脱落。不良的SiO淀积所产生的不平整和非化学配比SiO层会降低器件性能。阳极氧化过程是引起铜沾污的一个可能来源。对所怀疑的阵列界面都发现有碳沾污,若其浓度大于10原子％,就会严重影响阵列性能。已证明俄歇电子光谱技术在阵列工艺过程的质量控制检验方面是非常有用的。
Auger and depth-distribution analyzes have been performed on a series of InSb infrared detector arrays with the aim of detecting interface contamination and clarifying that the reason is due to improper array process. There are three aspects to determine the serious impact of local interface contamination and mis-use of materials on the array performance and yield during the process, namely, sheet diffusion, SiO deposition and anodization of InSb surface. In the diffusion of cadmium in the local impurities in the local assembly will form a bad knot and nucleation, the local assembly may have the contact off. Uneven and non-stoichiometric SiO layers from poor SiO deposition can degrade device performance. Anodic oxidation is a possible source of copper contamination. Carbon contamination is found on the suspect array interface, and concentrations greater than 10at% can seriously affect array performance. Auger electron spectroscopy has proven to be very useful in quality control testing of array processes.