论文部分内容阅读
采用常压化学气相淀积（ＡＰＣＶＤ）方法，生长了不同氧含量的ＳＩＰＯＳ（半绝缘含氧多晶硅）膜，研究了ＳＩＰＯＳ膜的结构组成．ＳＩＰＯＳ膜是微晶，多晶和非晶共存的结构，其晶态物中含有缺氧的α－Ｃｒｉｓｔｏｂａｌｉｔｅ（方石英）结构．膜中含氧量可变，以ＳｉＯｘ（ｘ＜２）表示，随着氧含量的增加或减少，其结构向非晶或多晶方向移动．膜中氧原子分布不均匀，局部有氧原子微区集中或缺少现象，使Ｘ＝０或１或２．
SIPOS (semi-insulating oxygen-rich polysilicon) films with different oxygen contents were grown by atmospheric pressure chemical vapor deposition (APCVD) method. The structure of SIPOS films was studied. SIPOS film is microcrystalline, polycrystalline and amorphous coexistence of the structure, the crystal material containing hypoxic α-Cristobalite (cristobalite) structure. The oxygen content in the film is variable, expressed as SiOx (x <2), and its structure shifts to either amorphous or polycrystalline orientation as the oxygen content increases or decreases. The distribution of oxygen atoms in the film is not uniform, and the concentration or absence of localized oxygen atoms in the micro-regions concentrates X = 0 or 1 or 2.