一、引言薄膜电致发光(TFEL)最终已在许多应用领域成为一种实用的平板显示器件。它是实现批量生产和广泛应用的唯一固体显示器件。器件制造者的成功部分应归功于他们能在大面积上形成优质、无缺陷的介质膜。除了芬兰采用原子层外延工艺制备钛/铝氧化物复合介质外,1974年夏普公司提出在双层介质膜结构的TFEL 器件中采用的Y_2O_3介质在生产过程中已被硅化合物的介质所代替。为了改进显示器件的性能,对其它一些介质进行了试验,尤其是提高器件亮度和降低阈值电压方面的试验。这些介质中的绝大部分 I. INTRODUCTION Thin-film electroluminescence (TFEL) has finally become a practical flat panel display device in many fields of application. It is the only solid-state display device for mass production and wide application. Part of the success of device makers is due to their ability to form high-quality, defect-free dielectric films over large areas. In addition to Finland using atomic layer epitaxy process for the preparation of titanium / aluminum oxide composite media, Sharp Corporation in 1974 proposed two-layer dielectric film structure of TFEL devices Y_2O_3 media used in the production process has been replaced by the silicon compound medium. In order to improve the performance of the display device, some other media have been tested, in particular, to improve the brightness of the device and reduce the threshold voltage test. The vast majority of these media