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采用循环伏安法(CV)对离子液体Reline中三元CuCl2+InCl3+SeCl4体系和四元CuCl2+InCl3+GaCl3+SeCl4体系的电化学行为进行了研究。研究表明,In3+并入三元CIS(Cu-In-Se)薄膜体系和Ga3+并入四元CIGS(Cu-In-Ga-Se)薄膜体系均有两种途径:一是发生共沉积,二是直接还原。利用电感耦合等离子体发射光谱(ICP)和扫描电镜(SEM)对沉积电势、镀液温度和主盐浓度对CIGS薄膜组成、镀层表面形貌的影响进行了测试,结果表明通过工艺参数的选择可以控制Ga/(Ga+In)和CIGS薄膜组成并得到化学计量比为Cu1.00In0.78Ga0.27Se2.13的薄膜。
Cyclic voltammetry (CV) was used to study the electrochemical behavior of ternary CuCl2 + InCl3 + SeCl4 and quaternary CuCl2 + InCl3 + GaCl3 + SeCl4 in the ionic liquid Reline. The results show that there are two ways to incorporate In3 + into Cu-In-Se thin film system and Ga3 + into Cu-In-Ga-Se thin film system. Direct reduction. The effects of deposition potential, bath temperature and main salt concentration on the composition of CIGS thin films and surface morphology of coatings were tested by Inductively Coupled Plasma-Atomic Emission Spectroscopy (ICP) and Scanning Electron Microscopy (SEM). The results show that the choice of process parameters The composition of the Ga / (Ga + In) and CIGS thin films was controlled and a thin film with a stoichiometric ratio Cu1.00In0.78Ga0.27Se2.13 was obtained.