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本文叙述Ti_XW_(1-X)合金薄膜的制备方法以及不同的TiW组份对Ti_XW_(1-X)/Si势垒高度的影响.结果表明:当TiW组分不同时,TiW/Si接触的势垒高度会在一定的范围内(0.54eV～0.66eV)变化.由于TiW/Si的势垒高度较低,所以在电路中采用TiW/Si SBD则有利于SBD面积的缩小.
This paper describes the preparation of Ti_XW_ (1-X) alloy thin films and the effect of different TiW components on the Ti_XW_ (1-X) / Si barrier height.The results show that the TiW / Si potential The barrier height will vary within a certain range (0.54eV ~ 0.66eV). Due to the lower barrier height of TiW / Si, TiW / Si SBD in the circuit is beneficial for the reduction of the SBD area.