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本文用DLTS谱仪和单脉冲瞬态电容技术测量了光通信用GaAlAs/GaAs双异质结发光管中的深能级,对有源区掺Si和掺Ge的相同结构器件,均测得有多子陷阱存在,其能级位置分别为E_C—E_D≈0.29eV和E_T—E_V≈0.42eV。比较了外延系统中氧含量变化对有源区掺Si器件深能级的影响,以及有源区EL图象中的DSD与深能级关系,结果表明外延系统中氧含量对深能级有明显影响,而EL图象中DSD的出现率与深能级无明显关系。
In this paper, the DLTS spectrometer and single pulse transient capacitor technology was used to measure the deep level of GaAlAs / GaAs double heterostructure light-emitting diode used in optical communication. For the same structure device with Si doped and Ge doped active region, Traps exist and their energy level positions are E_C-E_D≈0.29eV and E_T-E_V≈0.42eV, respectively. The effect of oxygen content in epitaxial system on the deep-level of Si-doped devices in active region and the relationship between DSD and deep level in EL images of active region are compared. The results show that the oxygen content in epitaxial system is significant to deep level , While the incidence of DSD in EL images has no obvious relationship with deep level.