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本文报道了非平面衬底上分子束外延生长ＧａＡｓ脊形量子线结构的实验研究．已成功地在ＧａＡｓ（００１）刻蚀条形衬底上生长出了由（１１１）面和（１１３）面构成的两种脊形量子线结构．本文讨论了非平面衬底上ＭＢＥ生长脊形结构的形成机制，认为在一定的生长条件下，脊形结构的表面取向是由两个原始交界面上生长速率的相对差异决定的；而生长速率的差异是由表面再构的不同决定的．
In this paper, we report the experimental study on the quantum wire structure of GaAs ridge grown by molecular beam epitaxy on a non-planar substrate. Two types of ridge quantum wire structures consisting of (111) planes and (113) planes have been successfully grown on GaAs (001) etched strip substrates. In this paper, the formation mechanism of MBE ridge structures on non-planar substrates is discussed. Under certain growth conditions, the surface orientation of ridge structures is determined by the relative difference in growth rate between the two original interfaces. The growth rate The difference is determined by the surface reconstruction of the different.