整体半导体产业正在尝试找到一种方法,不需要从硅基板转换而利用砷化铟镓(InGaAs)的更高电子迁移率,包括英特尔(Intel)与三星(Samsung);而IBM已经展示了如何利用标准CMOS工艺技术来达成以上目标。近日IBM展示了一种将三五族(III-V)砷化铟镓化合物放到绝缘上覆硅(SOI)晶圆的技术,现在该公司有另一个研究团队则是声称发现了更好的方法, The overall semiconductor industry is trying to find a way to take advantage of the higher electron mobility of InGaAs, which does not require conversion from a silicon substrate, including Intel and Samsung; IBM has demonstrated how to utilize Standard CMOS technology to achieve these goals. Recently, IBM demonstrated a technology for introducing III-V indium gallium arsenide into insulating SOI wafers. Now another research group of the company claims to have found a better method,