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随着现代通讯和科学技术的发展,在许多工程应用领域中要求多倍频程的宽带放大器。单片行波放大器由于可使各种寄生参量减至最低。并将器件的参量作为传输线的一部分。从而可以获得理想的宽带放大特性。在超宽带放大方面显示出巨大的潜力与优势。作为一种电性能优良、集成度高的微波集成电路,其研究与应用的前景广阔。本文简单介绍了一个2～12GHz的超宽带GaAs单片行波放大器的设计思想和工艺实现。 为降低高频损耗及寄生参量对行波放大器高频增益的影响,有效地改善单片行波放大器的高频增益性能,研究中采用了高端频率特性较好的m-derived型行波放大电路。设计中有源S参数的获取是从MESFET的几何及材料参数出发,算出等效电路参数值、等效电路Y参数,最后转化为相应的S参数。电路则运用网络分析方法。利用计算机对其进行小信号模拟,并对行波放大器主体、输入输出匹配及偏置电路采取分步逐级优化,直至获得满意的增益带宽特性。在设计时,为使CAD结果更符合实际电路,还尽量号虑了各种因素。如微带的不连续性、工艺起伏等对电路性能的影响。整个单片电路由分布参数和集总参数元件相结合组成。
With the development of modern communication and science and technology, multi-octave wideband amplifiers are required in many engineering applications. Single-chip traveling wave amplifier due to various parasitic parameters can be minimized. And the device’s parameters as part of the transmission line. Thus can obtain the ideal broadband amplification characteristic. In the ultra-wideband amplification shows great potential and advantages. As a kind of microwave integrated circuit with excellent electrical performance and high integration, its research and application have a bright future. This article briefly introduced a 2 ~ 12GHz ultra-wideband GaAs monolithic traveling wave amplifier design and process technology. In order to reduce the influence of high-frequency loss and parasitic parameters on the high-frequency gain of the traveling-wave amplifier and effectively improve the high-frequency gain performance of the single-chip traveling wave amplifier, m-DER type traveling wave amplifier . In the design, the active S parameters are obtained from the geometric and material parameters of the MESFET, the equivalent circuit parameters and the equivalent circuit Y parameters are calculated, and finally the corresponding S parameters are obtained. Circuit is the use of network analysis. The signal is simulated by small computer using a computer, and step by step optimization is performed on the main body of the traveling wave amplifier, the input / output matching and the bias circuit until the desired gain bandwidth is obtained. In the design, in order to make CAD results more in line with the actual circuit, but also try to consider a variety of factors. Such as the microstrip discontinuities, process fluctuations on the circuit performance. The entire monolithic circuit consists of a combination of distribution parameters and lumped parameter elements.