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本文叙述了一种能制造X波段硅双极晶体管的先进的双极晶体管工艺的两年计划。该计划最后以四单胞晶体管在10千兆赫下具有4.5分贝增益和20％的功率附加效率而输出1瓦连续波功率得以实现。实现该计划的关健在于采用最新工艺(包括适应亚微米分辨率要求的电子束光刻技术)获得边沿陡峻的整套图形。讨论了ML-250单一单胞器件的设计参数,这些参数是与所引入的最新工艺技术(例如电子束光刻、等离子腐蚀、离子铣、砷和硼的掺杂氧化物淀积和扩散、薄层外延等)有关的。测出f_T为8千兆赫和f_(max)为25千兆赫的晶体管安装在4毫米×4毫米氧化铍载体上,然后采用一个集成匹配网络。直流特性与利用专门设计的同轴调谐器得到的8、10和12千兆赫性能的数据有关。
This article describes a two-year plan for advanced bipolar transistor technology that can make X-band silicon bipolar transistors. The plan eventually came at a 4-cell transistor with 4.5 dB gain at 10 gigahertz and 20% power added efficiency to deliver 1 watt CW power. The key to this plan is to get steep edge sets of the latest graphics, including electron beam lithography for sub-micron resolution. The design parameters of the ML-250 single cell device are discussed in relation to the latest process technologies introduced such as electron beam lithography, plasma etching, ion milling, doping of arsenic and boron oxide deposition and diffusion, thin Layer epitaxy, etc.) related. The transistor with f_T of 8 GHz and f_ (max) of 25 GHz was measured on a 4 mm x 4 mm beryllia oxide carrier and then an integrated matching network was used. The DC characteristics are related to the 8, 10 and 12 gigahertz performance data obtained with a specially designed coaxial tuner.