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本文介绍了适于77K工作的多晶硅发射区双极型晶体管,给出了在不同工作电流条件下的电流增益的温度模型。结果表明在小电流条件下电流增益随温度下降而下降得更为剧烈,并且讨论了在不同注入情况下,浅能级杂质的陷阱作用对截止频率的影响。
This paper presents a polysilicon emitter bipolar transistor for 77K operation. The temperature model of the current gain for different operating currents is given. The results show that the current gain decreases more drastically with the decrease of temperature at low current, and the influence of the trapping effect of shallow level impurity on the cutoff frequency under different injection conditions is discussed.