P-type ZnO:N films have been grown successfully by chemical vapor deposition (CVD) using Zn4(OH)2(O2CCH3)6·2H2O as the solid source material and ZnNO3 as the doping source material. XPS, Hall-effect measurement and PL spectra were employed to analyze the structural, electrical and optical properties and study the influence of substrate temperature on the film. Results showed that with a lower substrate temperature, the film exhibited p-type conduction and its resistivity decreased when the substrate temperature increased. When the substrates temperature was 400℃, p-type ZnO films were obtained with carrier concentration of +5.127×1017 cm?3, resistivity of 0.04706 ?·cm and Hall mobility of 259 cm2/(V·s); they still exhibited p-type conduction after a month. When the substrate tem- perature was too high, the film was transformed from p-type to n-type conduction. P-type ZnO: N films have been grown successfully by chemical vapor deposition (CVD) using Zn4 (OH) 2 (O2CCH3) 6 · 2H2O as the solid source material and ZnNO3 as the doping source material. XPS, Hall- effect measurement and PL spectra were employed to analyze the structural, electrical and optical properties and study the influence of substrate temperature on the film. Results showed that with the lower substrate temperature, the film exhibited p-type conduction and its resistivity decreased when the substrate temperature increased. The resistivity of 0.04706? Cm and Hall mobility of 259 cm2 / (Vs); they still show p -type conduction after a month. When the substrate tem- perature was too high, the film was transformed from p-type to n-type conduction.