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研究了单层ＧｅＳｂ２Ｔｅ４真空射频溅射薄膜在４００ｎｍ～８３０ｎｍ区域的吸收、反射光谱和光学常数（ｎ，ｋ），发现ＧｅＳｂ２Ｔｅ４薄膜在４００ｎｍ～６００ｎｍ波长范围内具有较强的吸收。在短波长静态测试仪上测试了ＧｅＳｂ２Ｔｅ４薄膜的光存储记录特性，发现在５１４．５ｎｍ波长用较低功率的激光辐照样品时薄膜在写入前后的反射率变化较大，擦除前后的反射率对比度较低，可通过膜层设计来提高
The absorption, reflection spectra and optical constants (n, k) of single-layer GeSb2Te4 vacuum RF sputtering films in 400nm ~ 830nm region were investigated. It was found that GeSb2Te4 thin films have strong absorption in the wavelength range of 400nm ~ 600nm. The optical recording characteristics of GeSb2Te4 thin films were tested on a short wavelength static tester. It was found that the reflectance of the films before and after writing changed greatly when the samples were irradiated with lower power laser at 514.5nm. The reflectance before and after erasing Lower contrast rate can be improved through the design of the film