采用一种新的方法──激光-等离子体辅助气相沉积法（LPCVD），在自行研制的LPCVD装置上进行了SiH4-NH3-N2体系沉积Si3N4膜的工艺试验；采用正交试验法选择工艺多数，根据显微硬度评价膜层性能，并找出最佳工艺参数：激光功率密度为328W／cm2，RF电源功率为50W，氮硅流量比为10。结果表明，激光功率密度对膜层显微硬度的影响最大，RF电源功率的影响次之，氮硅流量比的影响最弱。 A novel method, laser-plasma-assisted vapor deposition (LPCVD), was used to fabricate the Si3N4 film by SiH4-NH3-N2 system on a self-developed LPCVD device. , The film performance was evaluated according to the microhardness, and the best process parameters were found out: the laser power density was 328W / cm2, the power of RF power was 50W, and the flow ratio of nitrogen and silicon was 10. The results show that the laser power density has the greatest effect on the microhardness of the film, followed by the power of the RF power, and the effect of the flow ratio of nitrogen and silicon on the weakest.