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在蓝宝石 (0 0 0 1)衬底上采用低压金属有机物化学气相沉积 (MOCVD)方法生长GaN外延层结构 ,以此为材料制作了GaN基肖特基结构紫外探测器 .测量了该紫外探测器的暗电流曲线、C V特性曲线、光响应曲线和响应时间曲线 .该紫外探测器在 5V偏压时暗电流为 0 4 2nA ,在 10V偏压时暗电流为 38 5nA .在零偏压下 ,该紫外探测器在2 5 0nm～ 36 5nm的波长范围内有较高的响应度 ,峰值响应度在 36 3nm波长处达到 0 12A/W ,在 36 5nm波长左右有陡峭的截止边 ;当波长超过紫外探测器的截止波长 (36 5nm左右 ) ,探测器的响应度减小了三个数量级以上 .该紫外探测器的响应时间小于 2 μs.
A GaN-based Schottky structure UV detector was fabricated by using low-pressure metal-organic chemical vapor deposition (MOCVD) on a sapphire (0 0 0 1) substrate to fabricate a GaN epitaxial layer structure. The UV detector Dark current curve, CV characteristic curve, light response curve and response time curve.The ultraviolet detector has a dark current of 0 4 2nA at 5V bias voltage and a dark current of 385nA at 10V bias voltage. Under zero bias voltage, The UV detector has a high responsivity in the wavelength range from 250 nm to 365 nm, the peak responsivity reaches 0 12A / W at a wavelength of 363 nm and a steep cutoff edge at a wavelength of 365 nm. When the wavelength exceeds UV detector cut-off wavelength (36 5nm or so), the responsivity of the detector is reduced by more than three orders of magnitude. The UV detector response time is less than 2 μs.