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本文研究了利用正硅酸乙酯在InP上等离子增强化学汽相淀积SiO_2膜的方法.研究了InP表面处理对SiO_2-InP界面的影响.测量分析了SiO_2膜的性质,InP-MIS结构的C-V特性及其滞后、频散效应.结果指出,用这种方法可获得性能较好的SiO_2膜和SiO_2-InP界面.
The effect of InP surface treatment on the interface of SiO_2-InP has been studied by means of plasma enhanced chemical vapor deposition of SiO_2 film on InP by using tetraethylorthosilicate. The properties of SiO_2 film, the properties of InP-MIS structure CV characteristics and its lag and dispersion effects.The results show that this method can get better performance of SiO_2 film and SiO_2-InP interface.