论文部分内容阅读
为了获得良好的砷化镓肖特基势垒场效应晶体管(简称 GaAs SBFET),有必要在结构上缩短栅长 L 减少寄生损耗。目前,尤其在缩短栅长方面已做出极大努力,并正在研究接触曝光、投影曝光以及电子束曝光方法。虽然已出售用接触曝光方法制作的1微米栅 GaAs SBFET,已经获得超过以前的硅双极晶体管高频低噪声特性,仍希望进一步缩短栅长。我们采用改良的接触曝光方法试制了0.5微米栅结构的 FET,已证实可以良好地批量生产。试制的 FET 得到了空前良好的高频低噪声特性,最高振荡频率 f_(max)为85千兆
In order to obtain a good gallium arsenide Schottky barrier field effect transistor (referred to as GaAs SBFET), it is necessary to shorten the gate length L to reduce parasitic losses. At present, great efforts have been made to shorten the gate length, and contact exposure, projection exposure, and electron beam exposure methods are under study. Although the 1 micron gate GaAs SBFETs fabricated by the contact exposure method have been sold and the high frequency low noise characteristics of the previous silicon bipolar transistors have been obtained, it is still desirable to further shorten the gate length. We developed a 0.5-micron gate-FET with a modified contact exposure method that has proven to be well mass-produced. The prototype FET has achieved unprecedented high frequency and low noise characteristics, the maximum oscillation frequency f_ (max) is 85 gigabits