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通过将有机空穴阻挡材料BCP薄层插入垂直构型有机发光晶体管器件ITO/NPB(40nm)/Al(30nm)/NPB(20nm)/Alq3(55nm)/Al中的不同位置对器件光电特性的影响来研究器件漏电流较大的原因以及器件中具体的载流子过程.充分证明了栅极注入的空穴对沟道中的电流有贡献.进而通过用LiF薄层修饰漏极来增强电子的注入并减小漏电流,得到了相对稳定的发光晶体管器件,其发光强度有很大提高并可很好地由栅极电压来进行调控.更换发光材料层容易得到不同颜色的发光晶体管.
By inserting a thin layer of the organic hole-blocking material BCP into different positions in the vertical configuration organic light-emitting transistor devices ITO / NPB (40 nm) / Al (30 nm) / NPB (20 nm) / Alq3 (55 nm) / Al It is proved that the hole injected by the gate contributes to the current in the channel and further enhances the electron emission by modifying the drain with a thin layer of LiF Injecting and reducing the leakage current, a relatively stable light-emitting transistor device is obtained, whose luminous intensity is greatly improved and can be well regulated by the gate voltage, and the light-emitting transistor with different colors can be easily obtained by changing the luminescent material layer.