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研究了钒掺杂生长半绝缘6 H-SiC的补偿机理.二次离子质谱分析结果表明,非故意掺杂生长的6 H-SiC中,氮是主要的剩余浅施主杂质.通过较深的钒受主能级对氮施主的补偿作用,得到了具有半绝缘特性的SiC材料.借助电子顺磁共振和吸收光谱分析,发现SiC中同时存在中性钒( V4 +)和受主态钒( V3 +)的电荷态,表明掺入的部分杂质钒通过补偿浅施主杂质氮,形成受主态钒,这与二次离子质谱分析结果相吻合.通过对样品进行吸收光谱和低温光致发光测量,发现钒受主能级在6 H-SiC中位于导带下0.62eV处.
The compensation mechanism of vanadium-doping growth of semi-insulating 6 H-SiC was studied.The results of secondary ion mass spectrometry showed that nitrogen was the main remaining shallow donor impurity in the unintentionally doped 6 H-SiC.The deep vanadium At the acceptor level, the SiC material with semi-insulating properties was obtained by the compensation of nitrogen donors.By means of electron paramagnetic resonance and absorption spectroscopy analysis, it was found that both the neutral vanadium (V4 +) and the acceptor vanadium (V3 +), Indicating that part of the doped vanadium forms the acceptor-state vanadium by compensating the shallow donor impurity nitrogen, which is consistent with the results of the secondary ion mass spectrometry.By absorption spectra and low-temperature photoluminescence measurements of the sample, The vanadium acceptor level was found to be 0.62eV below the conduction band in 6 H-SiC.