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采用磁控溅射法,通过ZnO陶瓷靶和Mg金属靶在石英衬底上制备了MgxZn1-xO薄膜。研究了Mg原子含量对MgxZn1-xO薄膜结构和光学性能的影响。XRD测试结果表明,MgxZn1-xO薄膜在(0002)方向有明显的c轴择优取向。随着Mg原子含量的提高,薄膜由六角单相转化为六角相和立方相的混合相。MgxZn1-xO合金薄膜的透射谱表明,薄膜的透射率略有下降,但在可见光区域的平均透射率仍大于85%,吸收边逐渐蓝移,最短的吸收边为283nm。能隙宽度图表明,MgxZn1-xO薄膜的能隙宽度从3.36eV增加到4.27eV。
MgxZn1-xO thin films were prepared on quartz substrates by magnetron sputtering using ZnO ceramic targets and Mg metal targets. The effect of Mg atom content on the structure and optical properties of MgxZn1-xO films was investigated. The XRD results show that the MgxZn1-xO film has obvious c-axis preferred orientation in the (0002) direction. With the increase of Mg atom content, the film is transformed from hexagonal single phase to mixed phase of hexagonal phase and cubic phase. The transmission spectra of MgxZn1-xO alloy films show that the transmittance of the films decreases slightly, but the average transmittance in the visible region is still above 85%. The absorption edges are blue-shifted and the shortest absorption edge is 283nm. The energy gap width diagram shows that the energy gap width of the MgxZn1-xO thin film increases from 3.36eV to 4.27eV.