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在LP MOCVD中 ,我们利用Zn(C2 H5) 2 作Zn源 ,CO2 作氧源 ,在 (0 0 0 2 )蓝宝石衬底上成功制备出c轴取向高度一致的ZnO薄膜 ,并对其进行 5 0 0℃～ 80 0℃四个不同温度的退火。利用XRD、吸收谱、光致发光谱和AFM等手段研究了退火对ZnO晶体质量和光学性质的影响。退火后 ,(0 0 0 2 )ZnO的XRD衍射峰强度显著增强 ,c轴晶格常数变小 ,同时 (0 0 0 2 )ZnOX射红衍射峰半高宽不断减小表明晶粒逐渐增大 ,这与AFM观察结果较一致。由透射谱拟合得到的光学带隙退火后变小 ,PL谱的带边发射则加强 ,并出现红移 ,蓝带发光被有效抑制 ,表明ZnO薄膜的质量得到提高。
In LP MOCVD, Zn (C2 H5) 2 was used as Zn source and CO2 was used as oxygen source to successfully prepare ZnO films with high c-axis orientation on a (0 0 0 2) sapphire substrate. 0 0 ℃ ~ 80 0 ℃ four different temperature annealing. The effects of annealing on the quality and optical properties of ZnO crystals were investigated by XRD, absorption spectra, photoluminescence spectra and AFM. After annealing, the intensity of (XRD) diffraction peaks of (0 0 0 2) ZnO increased significantly, while the lattice constant of c axis decreased. At the same time, the decrease of full width at half maximum of (0 0 0 2) , Which is consistent with the AFM observations. The optical bandgap obtained by the transmission spectrum fitting is smaller after annealing, and the PL edge emission is strengthened and redshift occurs. The blue band emission is effectively suppressed, indicating that the ZnO thin film quality is improved.