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对GaN基大功率LED工作的可靠性进行了分析,进而提出采用激光钻孔技术,利用高能激光束将蓝宝石基板打出孔洞,并在孔洞内壁蒸镀金属层薄膜。利用金属良好的导热性能,将芯片表面热能传导至基板,并利用封装技术使LED工作时产生的热量能迅速传导至环境中,降低热效应带来的不良影响。实验结果表明:在注入电流350 mA条件下,采用激光钻孔技术的LED较常规结构的LED,散热效率增加约15.0%,抗静电能力提高约500 V,连续工作1 000 h,亮度平均衰减低2.8%左右。
The reliability of GaN-based high-power LED is analyzed, and then laser drilling technology is proposed. The sapphire substrate is punched out by using a high-energy laser beam and a metal layer film is deposited on the inner wall of the hole. The use of metal thermal conductivity, the thermal conductivity of the chip surface conduction to the substrate, and the use of packaging technology so that LED heat generated during operation can be quickly transmitted to the environment, reducing the adverse effects of thermal effects. The experimental results show that the LED with laser drilling technology has a cooling efficiency of about 15.0% and an antistatic ability of about 500 V at a current injection of 350 mA compared with the LED with the conventional structure. The average working time is 1,000 hours, and the average brightness attenuation is low 2.8% or so.