从行波放大器设计理论出发,研制了一款基于低噪声GaAs赝配高电子迁移率晶体管(PHEMT)工艺设计的2~20 GHz单片微波集成电路(MMIC)宽带低噪声放大器。该款放大器由九级电路构成。为了进一步提高放大器的增益,采用了一个共源场效应管和一个共栅场效应管级联的拓扑结构,每级放大器采用自偏压技术实现单电源供电。测试结果表明,本款低噪声放大器在外加+5 V工作电压下,能够在2~20 GHz频率内实现小信号增益大于16 dB,增益平坦度小于±0.5 dB,输出P-1 dB大于14 dBm,噪声系数典型值为2.5 dB,输入和输出回波损耗均小于-15 dB,工作电流仅为63 mA,低噪声放大器芯片面积为3.1 mm×1.3 mm。 Based on the traveling wave amplifier design theory, a 2 ~ 20 GHz monolithic microwave integrated circuit (MMIC) wideband low noise amplifier based on the low noise GaAs pseudomorphic high electron mobility transistor (PHEMT) process was developed. The amplifier consists of nine circuits. In order to further improve the gain of the amplifier, a common source FET and a cascode FET topology are used, and each stage uses a self-bias technology to achieve a single power supply. The test results show that this LNA can achieve small signal gain of more than 16 dB, gain flatness of less than ± 0.5 dB and output of P-1 dB greater than 14 dBm at frequencies of 2 to 20 GHz with an applied +5 V operating voltage , A typical noise figure of 2.5 dB, input and output return loss of less than -15 dB, operating current of only 63 mA, and low noise amplifier chip area of ​​3.1 mm × 1.3 mm.