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采用GaAs/AlGaAs和InGaAs/AlGaAs多量子阱,研制出了双色同像素读取结构的中波/长波量子阱红外探测器及160×128元中波/长波双色多量子阱红外探测器芯片。器件的材料结构生长是采用分子束外延技术,在5.08 cm半绝缘GaAs衬底上完成的。发展了双色大面阵制备工艺,二维光栅的制备使用标准光刻和离子束刻蚀技术。在77 K时,对量子阱红外探测器测试,得到中、长波段峰值探测率分别为Dλ=(1.61～1.90)×1010 cmHz1/2W-1和(1.54～2.67)×1010 cmHz1/2W-1。中、长波段峰值波长分别为(2.7～3.8)μm和8.3μm。
In this paper, we have developed a medium wave / long wave quantum well infrared detector with a two-color pixel readout structure and a 160 × 128 element mid-wave / long wave two-color multiple quantum well infrared detector chip using GaAs / AlGaAs and InGaAs / AlGaAs multiple quantum wells. The material structure of the device is grown using molecular beam epitaxy on a 5.08 cm semi-insulating GaAs substrate. The development of two-color large area array fabrication process, the preparation of two-dimensional grating using standard lithography and ion beam etching technology. At 77 K, for the quantum well infrared detector, the medium and long-wave peak detection rates were respectively Dλ = (1.61-1.90) × 1010 cmHz1 / 2W-1 and (1.54-2.67) × 1010 cmHz1 / 2W-1 . Medium and long-wavelength peak wavelengths were (2.7 ~ 3.8) μm and 8.3μm.