Far-infrared reflection and Raman scattering measurements have been carried out on reactive ion,etched p-ZnTe samples.The averaged thickness of the surface damaged layer is found to be in the range of 1.0-1.5μm,and the,etch-induced defect density is in the order of 1018cm-3.The Raman intensity ratio between the second-order Raman peaks and the first-order longitudinal optical phonons reveals an increase trend with the radio frequency(rf)power.With the aid of related theories,we discuss the effects of the rf plasma power and the concentration of CH4/H2 on the damage,disorder,and the second-order Raman structures in p-ZnTe samples.