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A new approach to reduce the reverse current of Ge pin photodiodes on Si is presented,in which an i-Silayer is inserted between Ge and top Si layers to reduce the electric field in the Ge layer.Without postgrowthannealing,the reverse current density is reduced to ～10 mA/cm~2 at -1 V,i.e.,over one order ofmagnitude lower than that of the reference photodiode without i-Si layer.However,the responsivity ofthe photodiodes is not severely compromised.This lowered-reverse-current is explained by band-pinningat the i-Si/i-Ge interface.Barrier lowering mechanism induced by E-field is also discussed.The presented“non-thermal” approach to reduce reverse current should accelerate electronics-photonics convergence byusing Ge on the Si complementary metal oxide semiconductor (CMOS) platform.
A new approach to reduce the reverse current of Ge pin photodiodes on Si is presented, in which an i-Silayer is inserted between Ge and top Si layers to reduce the electric field in the Ge layer. Without postgrowthannealing, the reverse current density is reduced to ~ 10 mA / cm ~ 2 at -1 V, ie, over one order of magnitude lower than that of the reference photodiode without i-Si layer. However, the responsivity of the photodiodes is not severely compromised. explained by band-pinningat the i-Si / i-Ge interface. Barrier lowering mechanism induced by E-field is also discussed. The presented “non-thermal” approach to reducing reverse current should accelerate electronics-photonics convergence by using Ge on the Si complementary metal oxide semiconductor (CMOS) platform.