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SiO2 films were firstly implanted by 120 keV C-ions at room temperature (RT) and then irradiated at RT with 1.75 GeV Xe ions. The implantation was performed on 200 kV Heavy Ion Implanter (IMP, Lanzhou) to a dose in the range from 5.0×1016 to 8.6×1017 C/cm2. The Xe ion irradiation was carried out at HIRFL (Lanzhou) and the irradiation fluence was 5.0×1011 Xe/cm2. The new chemical bonds formed in the samples were investigated by use of micro-FTIR spectroscopy. Some parameters were given in Table 1.
SiO2 films were initially implanted by 120 keV C-ions at room temperature (RT) and then irradiated at RT with 1.75 GeV Xe ions. The implantation was performed on 200 kV Heavy Ion Implanter (IMP, Lanzhou) to a dose in the range from 5.0 × 1016 to 8.6 × 1017 C / cm2. The Xe ion irradiation was carried out at HIRFL (Lanzhou) and the irradiation fluence was 5.0 × 1011 Xe / cm2. The new chemical bonds formed in the samples were investigated by use of micro- FTIR spectroscopy. Some parameters were given in Table 1.