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用磁控溅射工艺,在柔性衬底上,在不同直流偏压条件下,制备了ITO(氧化铟锡)透明导电膜。最佳直流负偏压为40 V,此时制备的薄膜,其自由载流子霍耳迁移率有最大值为89.3 cm2/(V·s),薄膜的电阻率有最小值为6.3104W·cm,在可见光范围内相对透过率为80%左右。X射线衍射谱表明:薄膜为多晶纤锌矿结构,垂直于衬底的c轴具有(222)方向的择优取向,最大晶粒尺寸为55 nm。并重点讨论了薄膜的结构、电学和光学特性与衬底负偏压的关系。
Using magnetron sputtering process, ITO (Indium Tin Oxide) transparent conductive films were prepared on flexible substrates under different DC bias conditions. The best DC negative bias voltage is 40 V, the free-carrier Hall mobility at this time has the maximum value of 89.3 cm2 / (V · s) and the minimum resistivity of the film is 6.3104 W · cm , The relative transmittance in the visible range is about 80%. The results of X-ray diffraction showed that the film was polycrystalline wurtzite. The c-axis perpendicular to the substrate had a preferred orientation of (222) and the maximum grain size was 55 nm. The relationship between the structure, electrical and optical properties of thin films and the substrate negative bias voltage is also discussed.