In order to clarify the major factors h?ving confined the efficiencies of as-prepared crystalline silicon thin film (CSiTF) solar eelis on the SSP (silicon sheets from powder) ribbons, QE (quantum efficiency) and Suns-Voc study were performed on the epitaxial CSiTF solar eelis fabricated on the SSP ribbons, the SSP ribbons after surface being zone melting recrystallized (ZMR) and single crystalline silicon (sc-Si) substrates. The r esults show that the epi-layers deposited on the SSP ribbons have rough surfaces, which not only increases the diffusion reflectance on the surfaces but also makes the anti-reflection coatings become structure-loosened, both of which would deteriorate the light trapping effect; in addition, the epi-layers deposited on the SSP ribbons possess poor crystallographic quality, so the heavy grain boundary (GB) recombination limits the diffusion length of the minority carriers in the epi-layers, which makes the as-prepared CSiTF solar eelis suffer the worse spectra response at long-wavelength range. Nearly all the darkcharacteristicparametersoftheCSiTFsolareelisarefarawayfromtheidealvalues. The performances of the CSiTF solar cells are especially affected by too high /02 (the dark saturation current of space charge region) values and too low Rsh(parallel resistance) values. The higher /02 values are mainly caused by the heavy GB recombination resulting from the poor crystallographic qualities of the silicon active layers in the space charge regions, while the lower Rsh values are attributed to the electrical leakage at the un-passivated PN junction or solar cell edges after the solar cells are cut by the laser scriber. In order to clarify the major factors h? Ving confined the efficiencies of as-prepared crystalline silicon thin film (CSiTF) solar eelis on the silicon sheets from powder (ribbons), QE (quantum efficiency) and Suns-Voc study were performed on the epitaxial CSiTF solar eelis fabricated on the SSP ribbons, the SSP ribbons after surface being zone melting recrystallized (ZMR) and single crystalline silicon (sc-Si) substrates. The résults show that the epi-layers deposited on the SSP ribbons have rough surfaces, which not only increases the diffusion reflectance on the surfaces but also makes the anti-reflection coatings become structure-loosened, both of which would deteriorate the light trapping effect; in addition, the epi-layers deposited on the SSP ribbons possess poor crystallographic quality, so the heavy grain boundary (GB) recombination limits the diffusion length of the minority carriers in the epi-layers, which makes the as-prepared CSiTF solar eelis suffer the wo rse spectra response at long-wavelength range. Nearly all the dark characters of parameters of theCSiTFsolareelisarefarawayfromtheidealvalues. The performances of the CSiTF solar cells are especially affected by too high / 02 (the dark saturation current of space charge region) values ​​and too low Rsh (parallel resistance) values. The higher / 02 values ​​are mainly caused by the heavy GB recombination resulting from the poor crystallographic qualities of the silicon active layers in the space charge regions, while the lower Rsh values ​​are attributed to the electrical leakage at the un-passivated PN junction or solar cell edges after the solar cells are cut by the laser scriber.