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长虹 CH—10机心的主芯片(小信号处理 IC)为TDA8843,其(40)脚(行预激励输出端)外接的行推动电路非同一般,行推动管的型号为 BSN274。这 BSN274系飞利蒲生产的硅 N 沟道增强型场效应晶体管(MOS—FET),主要电参数为270 V/0.23 A/1 W,Ron=14Ω,外形酷似一只小功率塑封三极管(T0—92),其图形符号及引脚排列参见图1所示。在电路接法上,场效应管的 S、G、D 极分别对应 NPN 管的 e、b、c极,均是 G/b 极为零偏压时截止,加正向偏置时导通;不同的是场效应管为电压驱动,而 NPN 管为电流驱动。
Changhong CH-10 movement of the main chip (small signal processing IC) TDA8843, its (40) feet (line pre-excitation output) external line drive circuit is unusual, the line to promote the tube model BSN274. The BSN274 is a Silicon N-Channel Enhancement Field-Effect Transistor (MOS-FET) produced by Philips. Its main electrical parameters are 270 V / 0.23 A / 1 W and Ron = 14Ω. -92), the graphical symbols and pin arrangement shown in Figure 1. In the circuit connection, the FET S, G, D pole NPN tube corresponding to the e, b, c pole, are G / b extremely zero bias when the cut-off, plus the forward bias conduction; different The FET is driven by voltage, while the NPN is driven by current.