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一、概述通常讲的MOS集成电路,它是由金属—氧化物—半导体场效应晶体管组成。其作用与五极电子管特性相似;另一方面它又有一般晶体管的许多优点,除此之外,还具有一系列更突出的优点,即集成变高,制作工艺简单,功耗低,输入阻抗高(达10~(12)以上),而CMOS集成电路还具有供电范围宽,工作频率高f(?)3M以上,所以被广泛应用于数字控制电路及模拟开关电路等方面。二、MOS集成电路中主要问题的分析 1.栅击穿电压在MOS晶件管中,栅极与沟道之间隔着一层氧化膜,这种结构与电容器的结构一样。当栅源电压或栅漏电压超过一定限度,就会引起氧化膜的击穿,使栅极与氧化膜下面的硅发生短路现象。P—N结加上反向电
I. Overview Generally speaking, MOS integrated circuits, which are composed of metal-oxide-semiconductor field-effect transistors. Its function is similar to the characteristics of the five-pole tube; on the other hand, it has many advantages of the general transistor, in addition, it also has a series of more prominent advantages, namely the integration becomes high, the production process is simple, low power consumption, input impedance High (up to 10 ~ (12) above), and CMOS integrated circuits also has a wide range of power supply, high frequency f (?) 3M, it is widely used in digital control circuits and analog switch circuits. Second, MOS integrated circuit analysis of the main problems 1. Gate breakdown voltage In the MOS transistor, the gate and the channel separated by a layer of oxide film, this structure and the capacitor structure. When the gate-source voltage or the gate-drain voltage exceeds a certain limit, the breakdown of the oxide film will be caused and the gate and the silicon under the oxide film will be short-circuited. P-N junction plus reverse power