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An optimized device structure for reducing the RESET current of phase-change random access memory(PCRAM)with blade-type like(BTL) phase change layer is proposed.The electrical thermal analysis of the BTL cell and the blade heater contactor structure by three-dimensional finite element modeling are compared with each other during RESET operation.The simulation results show that the programming region of the phase change layer in the BTL cell is much smaller,and thermal electrical distributions of the BTL cell are more concentrated on the TiN/GST interface.The results indicate that the BTL cell has the superiorities of increasing the heating efficiency,decreasing the power consumption and reducing the RESET current from 0.67 mA to 0.32 mA.Therefore,the BTL cell will be appropriate for high performance PCRAM device with lower power consumption and lower RESET current.
An optimized device structure for reducing the RESET current of phase-change random access memory (PCRAM) with blade-type like (BTL) phase change layer is proposed. The electrical thermal analysis of the BTL cell and the blade heater contactor structure by three- dimensional finite element modeling are compared with each other during RESET operation. The simulation results show that the programming region of the phase change layer in the BTL cell is much smaller, and thermal electrical distributions of the BTL cells are more concentrated on the TiN / GST interface. RESULTS that the BTL cell has the superiorities of increasing the heating efficiency, decreasing the power consumption and reducing the RESET current from 0.67 mA to 0.32 mA. Before, the BTL cell will be appropriate for high performance PCRAM device with lower power consumption and lower RESET current.