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本文介绍的矩形双极晶体管噪声的精确分析是应用集合近似法(col-lective approach)和输运噪声理论的分析模型推导出来的。在此模型中,考虑了发射极电流集边效应,并精确地描述了中等和低值源阻抗时的噪声性能。确定了等效集总电路的结构,给出在电流和频率的分布范围内表征元件的解析关系。指出:(a)有源基区必须由一般热噪声源的非线性阻抗来表示;(b)对于低源阻抗,散粒噪声发生器的等效输入电压高于由低注入理论所预言的输入电压。而且发现,发射极集边导致:(a)基区阻抗;(b)热噪声;(c)等效集总电路的散粒噪声发生器之间的相互关系均匀而显著地减少。最后,可以看出,在高源阻抗偏置的晶体管中,集边效应产生时,经典的低注入理论似乎是正确的。
The exact analysis of the rectangular bipolar transistor noise presented in this paper is derived using analytical models of the col-lective approach and the transport noise theory. In this model, the emitter current-collector effect is taken into account and the noise performance at medium and low value source impedance is accurately described. The structure of the equivalent lumped circuit is determined, and the analytical relationship of the characterization elements in the distribution of current and frequency is given. (A) The active base region must be represented by the nonlinear impedance of a typical thermal noise source; (b) For low source impedance, the equivalent input voltage of the shot noise generator is higher than the input predicted by the low injection theory Voltage. Also, it was found that the emitter-side edges result in: (a) base-zone impedance; (b) thermal noise; and (c) uniform and significant reduction in the correlation between the shot noise generators in the equivalent lumped circuit. Finally, it can be seen that the classic low-injection theory seems to be correct when the edge-glitch effect occurs in high-impedance-biased transistors.