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在CdTe衬底上,应用开管等温汽相外延(ISOVPE)已经生长出能达到制作器件的Hg_(1-x)Cd_xTe(0.2≤x≤0.35)外延层。层的表面形貌似镜,且霍耳数据能与液相外延(LPE)生长的HgCdTe相比较。在等温汽相外延HgCdTe的层上制出了截止波长为4.1μm(77K)的光伏器件。它的性能可与我们用液相外延获得的HgCdTe层所制作的光伏器件的性能相比较。
On CdTe substrates, Hg_ (1-x) Cd_xTe (0.2≤x≤0.35) epitaxial layers have been grown by open tube isothermal vapor phase epitaxy (ISOVPE). The surface looks like a mirror, and Hall data can be compared with HgCdTe grown by liquid phase epitaxy (LPE). A photovoltaic device with a cutoff wavelength of 4.1 μm (77K) was fabricated on the layer of isothermal vapor phase epitaxy HgCdTe. Its performance can be compared to the performance of photovoltaic devices made from HgCdTe layers obtained by liquid phase epitaxy.