研究了ＦｅＣｌ３溶液浓度、温度及样品在溶液中的运动速度对Ｃｕ蚀刻速度的影响。在所研究的溶液浓度范围内，蚀刻过程为扩散控制为主的过程；在溶液相对密度为１．２６～１．３２时Ｃｕ的蚀刻速度具有极值。Ｃｕ在ＦｅＣｌ３溶液中蚀刻其表面有ＣｕＣｌ膜的沉积，钝化膜对Ｃｕ的蚀刻有大的影响；蚀刻反应受Ｆｅ３＋通过钝化膜的扩散过程控制。试验拟定了初步的蚀刻工艺。 The effects of FeCl3 solution concentration, temperature and sample moving velocity in solution on Cu etching rate were studied. In the range of solution concentration studied, the etching process is dominated by diffusion control; the etching rate of Cu has the extreme value when the solution relative density is 1.26 ~ 1.32. Cu is etched in the FeCl3 solution to deposit CuCl film on the surface, the passivation film has a great influence on the etching of Cu, and the etching reaction is controlled by the diffusion process of Fe3 + through the passivation film. The trial developed a preliminary etching process.