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根据一维动力学方程,提出了RP缺陷的演化模型,用于描述离子注入后硼杂质分布在退火过程中出现异常变化的物理现象.通过分析发现缺陷随退火时间呈指数变化,根据变化的时间常数与RP缺陷对间隙原子束缚能的大小有关的原理,提出RP缺陷对间隙原子的束缚能为2.41eV.将该模型模拟硼杂质随退火时间的分布时,得到缺陷的分布与硼原子的分布变化趋势一致,且变化的时间常数相近,这给出了退火中硼出现异常分布的一种新的解释.
According to the one-dimensional kinetic equation, an evolution model of RP defect is proposed to describe the physical phenomenon that the boron impurity distribution changes abnormally during the annealing process after ion implantation. It is found through analysis that the defect changes exponentially with the annealing time, Constant and RP defects on the size of the atomic binding energy of the principle, proposed RP defects on the gap atomic binding energy of 2.41eV. This model simulates the distribution of boron impurities with the annealing time, the distribution of defects and distribution of boron atoms The trend of change is consistent and the time constants of the changes are similar, which gives a new explanation for the abnormal distribution of boron in annealing.