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利用硅烷与甲烷的混合气在射频电场下的等离子体反应,淀积不同导电类型的非晶碳化硅薄膜,制成了p-i-n结注入型和均匀材料的碰撞电离型两种大面积发光二极管。本文报导这两种非晶发光器件的结构设计及光谱特性,并对器件的发光机现进行了讨论。
Two kinds of large-area impact-ionization LEDs with p-i-n junctions and uniform materials were fabricated by plasma reaction of a mixture of silane and methane under the RF electric field. Amorphous silicon carbide films with different conductivity types were deposited. This article reports the structural design and spectral characteristics of these two kinds of amorphous light-emitting devices, and discusses the light-emitting devices of the devices.