近年来,在集成电路生产工艺中已广泛开始采用等离子干腐蚀。其主要原因是,随着IC集成度的提高,必须进一步采用微细加工技术,这就有赖于干腐蚀法的不断进步才能实现。 以往使用的湿腐蚀法主要问题如下:(1)高温下酸将造成光致抗蚀剂的剥离;(2)由于各向同性腐蚀而引起钻蚀;(3)随着条宽接近亚微米,腐蚀液 In recent years, plasma dry etching has been widely started in integrated circuit manufacturing processes. The main reason is that with the improvement of IC integration, further microfabrication technology must be adopted, which depends on the continuous improvement of dry etching. The main problems of the wet etching method used in the past are as follows: (1) the acid will cause the peeling of the photoresist at high temperature; (2) the undercut etching is caused by isotropic etching; (3) Etching solution