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本文首次报道（３１１）面上生长的ＧａＡｓ／ＡｌＡｓ波纹超晶格中的激子局域化效应．在这种结构中，波纹异质结界面的缺陷，包括周期微扰和表面不平整将引入较深的激子束缚能级，因此低温下其发光能量相对于（１００）样品发生明显的红移．在Ⅱ类超晶格中，局域化能级成为Ｘ能谷电子向能谷输运的通道，从而加强了Ｘ－电子态混合，使实验观察到的Ｘ跃迁表现出跃迁的某些性质．
This paper reports for the first time the exciton localized effect in a GaAs / AlAs corrugated superlattice grown on (311) plane. In this structure, defects of the corrugated heterojunction interface, including periodic perturbations and surface irregularities, will introduce deeper exciton binding energy levels, so that the luminescence energy at the low temperature has a significant red shift relative to the (100) sample . In the class II superlattices, the localized energy level becomes the channel for the transport of the X-energy valley electrons to the energy trough, thereby enhancing the X-electron mixing and allowing the experimentally observed X transitions to exhibit some properties of transitions.