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通过固态源的分子束外延系统生长了调制掺杂AlGaAs/GaAs结构材料和InP/InP外延材料。在生长含磷材料之后,生长条件(真空状态)变差;我们通过采取合理的工艺方法和生长工艺条件的优化,获得了电子迁移率为1.86×105cm2/Vs(77K)调制掺杂AlGaAs/GaAs结构材料和电子迁移率为2.09×105cm2/Vs(77K)δSi掺杂AlGaAs/GaAs结构材料。InP/InP材料的电子迁移率为4.57×104cm2/Vs(77K),该数值是目前国际报道最高迁移率值和最低的电子浓度的InP外延材料。成功地实现了在一个固态源分子束外延设备交替生长高质量的调制掺杂AlGaAs/GaAs结构材料和含磷材料。
Modulated doped AlGaAs / GaAs structure materials and InP / InP epitaxial materials were grown by solid state source molecular beam epitaxy. After growth of phosphorus-containing material, the growth conditions (vacuum state) became worse. We obtained the AlGaAs / GaAs doped AlGaAs / GaAs with the electron mobility of 1.86 × 105cm2 / Vs (77K) by adopting reasonable process and optimization of growth conditions. The structure material and the electron mobility are 2.09 × 10 5 cm 2 / Vs (77K) δSi-doped AlGaAs / GaAs structure materials. The InP / InP material has an electron mobility of 4.57 × 10 4 cm 2 / Vs (77K), which is the most recently reported InP epitaxial material with the highest mobility and the lowest electron concentration. Successfully achieved in a solid state source molecular beam epitaxy equipment alternately grown high-quality modulation doped AlGaAs / GaAs structure materials and phosphorus-containing materials.