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发展了WN/W难熔栅自对准工艺。WN/W栅在850oC下退火，保持了较好的形貌。在此工艺基础上研制出了适用于互补逻辑电路的增强型n沟道异质结场效应晶体管。在1×50μm的HFET中，实现了最大跨导约为56mS/mm，阈值电压为3.5V。与p型HFET的－3V的阈值基本对称。反向击穿电压为4～5V。
WN / W refractory grid self-aligned process developed. WN / W gate annealing at 850oC, to maintain a good shape. Based on this process, an enhanced n-channel heterojunction field effect transistor for complementary logic circuits has been developed. In a 1 × 50 μm HFET, a maximum transconductance of about 56 mS / mm and a threshold voltage of 3.5 V were achieved. Basically symmetrical to the -3 V threshold of the p-type HFET. Reverse breakdown voltage of 4 ~ 5V.