论文部分内容阅读
通过分析Ag/P3HT/ITO结构样品的载流子注入特性,研究了PEDOT(3,4-Ethylene-dioxythiophene thiophene)的界面修饰对样品薄膜注入特性的影响,其中,P3HT(Poly(3-hexyl-thiophene))薄膜采用旋涂法制备,P3HT溶液浓度为30mg/ml(氯仿为溶剂)。测试结果表明:1)P3HT的退火温度对其本身性能影响很大,退火温度越高,导电性能越差,在373K时,性能达到最佳,单位面积电流可达0.092A/cm2;2)PEDOT的界面修饰作用使Ag与P3HT功函数不匹配的问题得到明显改善。实验结果与理论分析基本吻合,样品注入特性改善比在1.15～1.30之间。同样的样品在退火温度为373K时性能达到最佳,单位面积电流可达0.106A/cm2。
The effect of interfacial modification of PEDOT (3,4-Ethylene-dioxythiophene thiophene) on the injection characteristics of the samples was investigated by analyzing the carrier injection characteristics of Ag / P3HT / ITO samples. Among them, thiophene) films were prepared by spin-coating, with a concentration of P3HT solution of 30 mg / ml (chloroform as solvent). The results show that: 1) The annealing temperature of P3HT has a great influence on its own properties. The higher the annealing temperature, the poorer the conductivity, the best performance at 373K, the current per unit area up to 0.092A / cm2; 2) PEDOT The problem of interface mismatch between Ag and P3HT has been significantly improved. The experimental results are in good agreement with the theoretical analysis, and the improvement ratio of sample injection characteristics is between 1.15 and 1.30. The same sample annealed at 373K best performance, the current per unit area up to 0.106A / cm2.