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气凝胶薄膜具有超低的介电常数,在超大规模集成电路互连系统中有着巨大的应用潜力。采用溶胶-凝胶技术,通过酸/碱二步法控制实验条件,结合低表面张力溶剂替换以及CH3非活性基团置换修饰、超声振荡等,不需要超临界干燥,而仅在常压下就可以通过简单的提拉过程制备出疏水型低介电常数气凝胶薄膜。测得的红外透射光谱表明所制备的薄膜由于掺入甲基基团而疏水,接触角测试值约120o,制备过程中充分注意到:稀释、老化、有机修饰表面、热处理和提拉条件对膜的影响,使其过程达到最佳。热处理温度在150～650℃,采用6%三甲基氯硅烷时,制得的疏水型气凝胶薄膜折射率为1.08～1.12,介电常数为1.62～1.92。
Airgel films, with their ultra-low dielectric constant, have tremendous potential for use in very large scale integrated circuit interconnection systems. Using sol-gel technique, the experimental conditions are controlled by the acid / base two-step method, combined with low surface tension solvent replacement and CH3 non-reactive group substitution and modification, ultrasonic oscillation, etc., do not need supercritical drying, Hydrophobic low dielectric constant airgel films can be prepared by a simple pulling process. The measured infrared transmission spectra showed that the prepared films were hydrophobic due to the incorporation of methyl groups and the contact angle was about 120o. The preparation process fully noticed that the effects of dilution, aging, organically modified surface, heat treatment and pulling conditions on the membrane The impact of the process to achieve the best. When the heat treatment temperature is between 150 ℃ and 650 ℃, the refractive index of the hydrophobic airgel film prepared with 6% trimethylchlorosilane is 1.08-1.12 and the dielectric constant is 1.62-1.92.