为了得到CeO2为埋层的新型SOI(SiliconOnInsulator)材料,采用电子束蒸发沉积及后期退火处理的方法制备得到了高度(111)、(311)晶体取向的CeO2薄膜,为进一步外延制备SOI材料打下了良好的基础。同时,从热力学角度就退火对CeO2薄膜晶体取向的影响机理进行了初步的探讨。由于CeO2(111)、(311)面为密排面和次密排面,在结晶化过程中所需克服的能垒最低和次低,所以,退火后形成了(111)、(311)结构的CeO2薄膜。 In order to obtain a new type of SOI (SiliconOnInsulator) material with a buried layer of CeO2, CeO2 thin films with high (111) and (311) crystal orientations were prepared by electron beam evaporation deposition and post annealing treatment, which laid the foundation for the further epitaxial growth of SOI materials Good foundation. At the same time, the mechanism of the effect of annealing on the crystal orientation of CeO2 thin films was discussed from the thermodynamic point of view. Since the CeO2 (111) and (311) planes are both dense and sub-dense ones, the energy barriers to be overcome in the crystallization process are the lowest and the second lowest, so the (111) and CeO2 film.