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主要利用电致发光的实验手段,研究了极化效应对InGaN基LED器件发光特性的影响。实验中发现,InGaN基LED器件的峰位随注入电流的增加产生了先蓝移后红移的现象,蓝光和绿光LED分别蓝移3 nm和8 nm;而AlGaInP基红光LED器件的峰位仅红移。进一步研究发现,InGaN基LED的外量子效率在注入电流为50 mA处开始剧烈下降,AlGaInP基LED的外量子效率在100 mA处才开始缓慢下降,并且两者呈现不同的下降规律。通过与模拟结果对比发现,InGaN基LED的效率在下降开始阶段与俄歇复合引起的效率下降规律类似。以上实验结果表明,InGaN基LED器件中存在极化电场,且该极化电场会对LED器件的效率衰减产生促进作用。
The main use of electroluminescence experimental means to study the polarization effect on the InGaN-based LED device luminous characteristics. The experimental results show that the peak position of InGaN-based LED devices increases firstly and then shifts to redshift after blue-shift and the blue and green LEDs are blue-shifted by 3 nm and 8 nm, respectively. The peak of AlGaInP-based red LED device Bit redshift only. Further study found that the external quantum efficiency of InGaN-based LED began to drop sharply at the injection current of 50 mA. The external quantum efficiency of AlGaInP-based LED began to decline slowly at 100 mA, and both showed different decreasing rules. Compared with the simulation results, it is found that the efficiency of InGaN-based LEDs is similar to that caused by Auger recombination in the initial stage of decline. The above experimental results show that there is a polarized electric field in the InGaN-based LED device, and the polarized electric field can promote the efficiency decay of the LED device.