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In this paper,polycrystalline silicon films were deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition(ECR-PECVD)using SiH_4/Ar and SiH_4/H_2 gaseous mixture.Effects of argon flow rate on the deposition efficiency and the film property were investigated by comparing with H_2.The results indicated that the deposition rate of using Ar as discharge gas was 1.5-2 times higher than that of using H_2, while the preferred orientations and the grain sizes of the films were analogous.Film crystallinity increased with the increase of Ar flow rate.Optimized flow ratio of SiH_4 to Ar was obtained as F(SiH_4):F(Ar)=10:70 for the highest deposition rate.
In this paper, polycrystalline silicon films were deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD) using SiH_4 / Ar and SiH_4 / H_2 gaseous mixture. Effects of argon flow rate on the deposition efficiency and the film property were investigated by comparing with H_2. The results indicated that the deposition rate of using Ar as discharge gas was 1.5-2 times higher than that of using H_2, while the preferred orientations and the grain sizes of the films were analogous. of Ar flow rate. Optimized flow ratio of SiH 4 to Ar was obtained as F (SiH 4): F (Ar) = 10:70 for the highest deposition rate.