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采用热化学气相沉积技术在单晶硅基底上制备出了定向性好、与基底结合牢固的碳纳米管阵列,研究了制备工艺对定向生长碳纳米管阵列薄膜的影响.研究发现:生长温度在750℃,催化剂厚度在10 nm左右易于形成定向生长的碳纳米管薄膜.在混合气中乙炔的浓度为27％(体积百分比)时,可以获得管型准直、管壁较厚、与基体结合牢固的碳纳米管阵列.另外,对于碳纳米管的定向生长机制及提高其与基体之间的结合力的方法进行了初步探讨.
The carbon nanotube arrays with good orientation and firm bonding with the substrate were prepared by thermal chemical vapor deposition on monocrystalline silicon substrates and the effect of preparation process on the growth of carbon nanotube arrays was investigated. The results show that the growth temperature is 750 ℃, the thickness of the catalyst is about 10 nm easy to form a directional growth of carbon nanotube film acetylene concentration of 27% (vol%) in the mixed gas can be obtained when the tube-type alignment, thicker tube wall, combined with the substrate Solid carbon nanotube array.In addition, the directional growth mechanism of carbon nanotubes and the method of improving the binding force between the carbon nanotubes and the matrix are discussed.